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Surface Modification is achieved through the use of our Varian CF-3000 Ion Implanter. Ion implantation
offers the benefit of precisely modifying the elemental composition of the surface region of materials at room temperature. Precise composition changes are achieved through use of a 'dose processor' which
controls ion dose from as little as parts-per-million up to as much as 30-50 atomic percent (depending on the material and ions used).
VARIAN CF-3000 Cryo-pumped
Ion Implanter
with Ultra-high Vacuum Research Station
The laboratory has over sixteen years of ion implantation experience. Much of this work has been in the production and implantation of exotic ion species into both metallic
and other targets. A periodic table showing the numerous ion species implanted in the laboratory is available.
REFERENCE SAMPLES FOR SIMS
AND AUGER
The
Surface Science Laboratory at the University of Connecticut is now able
to offer atomic composition reference samples, used for quantitative surface analysis, to any interested parties. The concentrations are limited only
by the ion-target sputter yield. These concentrations
can go as high as 50 atomic percent of implanted ion to target material.
All implantations are done in a cryopumped ultrahigh vacuum system. Also all implantations are controlled
with a uniformity monitor in addition to the aforementioned dose processor.
It has been our experience
with SIMS analysis that quantification is more easily done when you are
able to "bracket" your element concentration of interest with multiple reference samples.
We would suggest an order of magnitude on either side of your suspected concentration, and one right at the level you anticipate.
We can produce concentrations in orders of magnitude starting at single parts per million.
Reference samples such as these
can prove very useful for other applications. If you need to determine
sputter time to a buried layer of material, we can implant that layer
with a specified atomic species at a specified depth. The
subsurface material will have a gaussian profile with a specified peak
concentraion.
Our experience includes
the computer modeling needed to predict the required energy and dose to
provide the concentration at the depth you require. These calulations
take into account the material removed from the surface
during the ion implantation process by ion sputtering. The result
is a reference sample with the correct concentration at the correct depth.
Below are two SIMS analysis
performed on reference samples produced with the ion implanter. They are
both Yttrium ions implanted into Ni-20Cr at concentrations of 1000 and
5000 parts
per million.
 
If you would like any further information on reference samples for your
specific needs, please contact: Daniel Goberman at the University of Connecticut
by phone (860) 486-5478 or by e-mail at daniel.goberman@uconn.edu
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